在Y-化CeO2陶中,金属绝缘器过渡和电阻切换
Fawaz Almutairi1,2, Meshari Alotaibi3, Anthony R West2
1Department of Physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, Saudi Arabia.
Physical chemistry chemical physics : PCCP
|December 1, 2023
概括
Y-doped ceria具有n型导电性,并且在更高的电压下经历了显著的可逆电阻切换. 这种在低氧气中增强的散量效应类似于在热力学不稳定的条件下摩特过渡.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 氧化物离子导体 氧化物离子导体
背景情况:
- 配的 (Y0.16Ce0.84O1.92) 被称为一个氧化物离子导体.
- 这种材料在小应用电压下表现出n型导电性.
研究的目的:
- 为了研究Y-doped ceria在增强应用电压下的电阻切换行为.
- 描述这种电阻切换现象的性质和条件.
主要方法:
- 在不同的应用电压下测量电导率.
- 在不同氧气偏压下 (pO2) 调研切换行为.
- 对开关机制的分析,将其与表面或晶体效应区分开来.
主要成果:
- 随着电压的增加,观察到2-3个数量级的电阻切换.
- 切换在歇斯底里是可逆的,并且在降低 pO 的大气中得到增强.
- 这种现象是一个散热效应,快速,并表现出莫特过渡的特征.
结论:
- Y-doped ceria显示了低场诱导的电阻切换,这是一个散装陶效应.
- 这种新兴现象发生在物质处于其热力学稳定区之外时.
- 观察到的切换与肖特基屏障或晶体相位过渡不同.
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