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Updated: Jul 9, 2025

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超薄的ReSe2的非线性光学特性和超快速载体动态

Yu Mao, Hongqiang Wang, Ivan Kislyakov

    Optics letters
    |December 1, 2023
    PubMed
    概括

    二化物 (ReSe2) 具有优异的非线性光学吸收和超快的载体动态. 这项研究为开发基于ReSe2的先进光电子设备提供了基础数据.

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    Carrier Generation and Recombination01:22

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    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
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