增长中断对AlGaN/GaN紫外线多量子井的形态和发光特性的影响

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Updated: Jul 9, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Published on: June 25, 2020

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Yufei Hou, Baibin Wang, Jing Yang

    Optics express
    |December 2, 2023
    PubMed
    概括

    持续增长的AlGaN/GaN紫外多量子井 (UV MQWs) 提高了表面平坦度和发光效率. 这种方法减少了与增长中断相比的缺陷和杂质结合,提高了UV MQW的性能.

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