在LaAlO100) 基板上沉积的单层SrIrO3膜中的电流电压特性
Rachna Chaurasia1, A K Pramanik1
1School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India.
概括
氧化 (SrIrO3) 薄膜具有半导体特性,其电阻力随着厚度的增加而增加. 电荷运输机制是从Mott发展出来的.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 薄膜技术 薄膜技术
背景情况:
- 氧化 (SrIrO3) 是一种复杂的氧化物,具有有趣的电子特性.
- 了解SrIrO3薄膜中的结构性质和电传输之间的关系对于潜在的应用至关重要.
- 在氧化 (LaAlO3) 等基板上的上生长可以控制薄膜的特性.
研究的目的:
- 为了研究SrIrO3薄膜的结构和电气特性.
- 为了确定 SrIrO3 薄膜中的电荷传输机制,作为厚度和温度的函数.
- 探索薄膜厚度,结构参数和电气行为之间的相关性.
主要方法:
- 采用X射线衍射 (XRD) 来分析表轴 SrIrO3 薄膜的结构质量和晶格参数.
- 在不同厚度 (18,25和40纳米) 的薄膜上进行电阻测量.
- 在不同的温度下测量电流-电压 (I-V) 特性,以阐明电荷传输机制.
主要成果:
- 优质的表层 SrIrO3 薄膜是在没有化学杂质的 LaAlO3 ((100) 基板上生长的.
- 外平面格子参数随着薄膜厚度的增加而增加,表明应变放松.
- 所有片都表现出半导体行为,电阻力随着厚度的增加而增加. 高温传导遵循莫特的2D VRH模型,而低温 I-V 曲线偏离了欧米行为,表明了普尔-弗伦克尔机制的主导地位.
结论:
- 薄膜厚度显著影响SrIrO3.3的结构和电气性能.
- 在SrIrO3薄膜中的电荷传输机制是温度依赖的,从可变范围跳跃过渡到普尔-弗伦克尔.
- 观察到的温度依赖的电荷传输可能与SrIrO3膜中低温磁性的发展有关.
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