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在道几何学中,Skyrmion的运输和消灭
F S Rocha1, J C Bellizotti Souza1, N P Vizarim2
1POSMAT-Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, Faculdade de Ciências, Universidade Estadual Paulista-UNESP, CP 473, 17033-360 Bauru, SP, Brazil.
概括
低电流允许斯基米翁通过漏斗阵列进行运输,而高电流会导致灭绝. 道墙壁减少了斯基米翁的大小,有助于穿越,并揭示了斯基米翁行为的五个不同的阶段.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 纳米技术 纳米技术
背景情况:
- Skyrmions是拓保护的旋转纹理,具有数据存储的潜力.
- 控制skyrmion动态对于设备应用至关重要.
- 道阵列为引导和操纵skyrmions提供了一个潜在的方法.
研究的目的:
- 为了研究在应用电流下在道阵列中的 skyrmion 运输和消灭.
- 了解电流密度和漏斗几何形状对 skyrmion 行为的影响.
- 为了确定有控制的 skyrmion 运动的条件,并防止不必要的灭绝.
主要方法:
- 原子模拟被用于模拟斯基米翁动力学.
- 模拟集中在与道阵列交互的 skyrmions 上.
- 分析了垂直于漏斗轴的应用电流的影响.
主要成果:
- 在低电流下观察到没有灭绝的传输,由 skyrmion-skyrmion 相互作用驱动.
- 在较高的电流下,由于应用场的压力,Skyrmion的消灭会发生.
- 在与道墙壁相互作用时,skyrmions的尺寸会减少,从而促进通道.
- 确定了五个不同的阶段:固定,不消灭的运输,带有消灭的运输,完全消灭和重新进入的固定.
结论:
- 道阵列可以控制 skyrmion 运输,其行为取决于电流和道大小.
- 描述了成功运输skyrmion的制度和导致灭绝的条件.
- 结果为设计基于skyrmion的设备提供了可控动态的见解.
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