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Updated: Jun 26, 2026

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来自基于单层过渡金属二甲基化物的一种发光器件的过偏光子发射

Shengyu Shan1, Jing Huang1, Sotirios Papadopoulos1

  • 1Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland.

Nano letters
|December 4, 2023
PubMed
概括

过渡金属二甲基化物 (TMD) 道发光二极管 (LED) 显示过偏差的发射. 这种辐射源于通过两电子连贯道过程产生激子,而不是热效应.

关键词:
转移能量转移能量是什么?激发电源的产生是激发电源.多个电子道的道.过偏差的光子发射辐射.过渡金属二甲基二甲基化物范德瓦尔斯的LED灯具

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...