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Updated: Jul 9, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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互扩散和结晶对Nb/Nb2O5/Pt记忆器值切换特性的影响

Sanjoy Kumar Nandi1, Shimul Kanti Nath1,2, Sujan Kumar Das1

  • 1Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia.

ACS applied materials & interfaces
|December 5, 2023
PubMed
概括

Nb/Nb2O5双层的热化改变了薄膜的固态度和结构. 结晶增强了设备的可靠性和耐用性,影响了电阻开关特性和电容.

关键词:
相互扩散的扩散.反应接口的反应接口反应接口.纪念馆是为了纪念.神经形态计算的神经形态计算氧化氧化物是的氧化物.门切换的切换门过渡金属氧化物 过渡金属氧化物波动性的切换切换

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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