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Updated: Jul 9, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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Published on: August 28, 2018

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双轴应变调制的电子结构层层的二维MoSiGeN4 Rashba系统的双轴应变

Puxuan Li1, Xuan Wang1,2, Haoyu Wang1

  • 1International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, P. R. China. qzz@zzu.edu.cn.

Physical chemistry chemical physics : PCCP
|December 6, 2023
PubMed
概括

双轴应变工程有效地控制2D MoSiGeN4 (MSGN) 材料中的电子特性. 这项研究揭示了MSGN中压力调节的Rashba旋转分裂 (RSS) 和Lifshitz型旋转分裂 (LSS),为旋转电子应用铺平了道路.

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