构建Co1-xS纳米颗粒嵌入N-Doped无形碳@石墨烯与增强的离子存储
Tongjun Li1,2,3,4, Xuanchen Chen2,3,5, Yudong Pang1
1School of Physics, Henan Normal University, 46 Jianshe Road, Xinxiang, 453007, P. R. China.
Small (Weinheim an der Bergstrasse, Germany)
|December 6, 2023
概括
一种新方法可以创建嵌入N-化碳/石墨烯 (CSCG) 的硫化物纳米粒子,用于先进的离子电池. 这种材料具有出色的容量和循环寿命,克服了以前的硫化阳极的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 硫化 (CoS) 是离子电池的一个有前途的阳极材料,因为它具有很高的理论容量.
- 然而,其实际应用受到低导电性,快速容量衰减和循环期间显著体积变化的阻碍.
研究的目的:
- 开发一种简单的大规模方法,用于制备嵌入N-化碳/石墨烯 (CSCG) 的硫化物纳米粒子.
- 为了评估CSCG作为离子电池的阳极材料的电化学性能.
主要方法:
- 采用一种简单且可扩展的合成方法,在N-doped碳/石墨烯矩阵中创建Co1-xS纳米粒子.
- 进行了电化学测试,包括循环性能和速率能力.
- 用密度函数理论 (DFT) 的计算来理解材料的特性.
主要成果:
- 在0.2°C的200个循环后,CSCG材料表现出高可逆放电容量937mAhg-1的高可逆放电容量.
- 在2.0C的高电流密度下,在500个循环后保持了596mAhg-1的容量.
- 增强的性能归因于减少体积变化,通过减少氧化石墨烯 (rGO) 防止聚合,以及由于联合空缺和N-doping增加的活性位点.
结论:
- 开发的CSCG材料为高性能离子电池阳极提供了有前途的解决方案.
- 结构工程战略有效地解决了传统硫化阳极的局限性.
- 这项工作提供了通过缺陷工程和 heteroatom doping 改进阳极材料的见解.
相关概念视频
Network Covalent Solids
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...


