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Updated: Jul 9, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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没有物理蒸汽沉积的可扩展的高效电气接触到MoS2

Anusha Shanmugam1, Muhammad Arshad Thekke Purayil1, Sai Abhishikth Dhurjati1

  • 1Indian Institute of Science Education & Research Thiruvananthapuram, Kerala 695551, India.

Nanotechnology
|December 6, 2023
PubMed
概括

这项研究引入了一种新的印扩散技术,用于在二硫化 (MoS2) 片上创建优质的电接触. 这些印接触器最大限度地减少了费米级别的固定,从而实现了接近理想的设备性能.

关键词:
在MoS2的基础上,MoS2联系工程 联系工程印接触器的联系方式低斯科特基屏障是一个很大的障碍.

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