NbO2

Ohhyuk Kwon1, Seongjae Heo1, Dongmin Kim1

  • 1Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.

Nanotechnology
|December 7, 2023
PubMed
概括

低温操作显著提高二氧化 (NbO2) 振荡器神经元的性能. 在120K的运行优化了启/关电阻比和振荡幅度,使得更大的突触数组能够用于神经形态计算.

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