准一维高阶拓绝缘体Bi4Br4的拓电子结构和旋转纹理

Wenxuan Zhao1, Ming Yang2,3, Runzhe Xu1

  • 1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China.

Nature communications
|December 7, 2023
PubMed
概括

研究人员使用先进的光谱学在Bi4Br4中探索了更高阶的拓绝缘体 (HOTI). 他们发现了链状态的证据,证实了HOTI阶段,并为自旋电子应用打开了大门.

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