在低电阻抗铁磁体中观察波动自旋霍尔效应
Chi Fang1,2, Caihua Wan1,3, Xiaoyue Zhang4,5
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.
Nano letters
|December 8, 2023
概括
研究人员发现了一种新的方法来增强旋转霍尔效应 (SHE),利用中反铁磁 (AFM) 阶段过渡附近的关键旋转波动. 这大大提高了旋转厅角 (SHA),为旋转电子设备带来更低的功耗.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 旋转霍尔效应 (SHE) 从电流中产生纯旋转电流,使磁化能够通过电气控制.
- 在低电阻系统中,减少自旋电子设备的功耗需要一个大的自旋霍尔角度 (SHA).
研究的目的:
- 调查 (Cr) 中反铁磁 (AFM) 阶段过渡附近的临界旋转波动,作为增强SHE的机制.
- 展示一种用于增强SHA的新方法,用于实际的自旋电子应用.
主要方法:
- 研究了 (Cr) 在其尼尔温度 (TN) 附近的旋霍尔效应.
- 分析了关键旋转波动对SHE的贡献,称为波动旋转霍尔效应.
主要成果:
- 在Cr.的AFM阶段过渡附近观察到SHA的显著增强.
- 在TN附近达到0.36的SHA峰值,与室温相比增加了153%.
- 证明了低标准化功耗,与现有的旋转轨道扭矩材料具有竞争力.
结论:
- 关键旋转波动是一种有效的机制,可以显著增加SHA.
- 这一发现为开发高性能自旋轨道电子设备提供了新的途径.
- 扩大了适用于自旋电子应用的抗铁磁材料的范围.
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