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Updated: Jul 9, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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有缺陷的ZrSe2:对于旋转电子应用来说是一个有前途的候选人

Sharieh Jamalzadeh Kheirabadi1, Fahimeh Behzadi2, Farzan Gity3

  • 1Department of Electrical Engineering, Safashahr Branch, Islamic Azad University, Safashahr, Iran.

Journal of physics. Condensed matter : an Institute of Physics journal
|December 8, 2023
PubMed
概括

二化物 (ZrSe2) 纳米带中的缺陷诱导铁磁性和改变电子性质,为旋电学创造了潜力. 空位显著影响磁矩和设备性能,为实验工作提供了实际指导.

关键词:
两维材料是二维材料.在ZrSe2纳米丝带上.密度函数理论 (DFT) 是指密度函数理论.缺点点是指缺点点的缺陷点,是指缺点点的缺陷点.量子运输是一种量子运输.旋转电子技术 (spintronics) 是一个技术.过渡金属二甲基化物 (TMDs) 过渡金属二甲基化物

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