相关实验视频

Updated: Jul 9, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Published on: April 12, 2018

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超薄的范德瓦尔斯兰氧化介电器用于二维场效应晶体管的二维场效应晶体管

Linyang Li1, Weiqi Dang2, Xiaofei Zhu1

  • 1College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China.

Advanced materials (Deerfield Beach, Fla.)
|December 8, 2023
PubMed
概括

合成超薄氧化 (LaOCl) 介电材料使得先进的二维电子技术成为可能. 这些高-κ介电剂通过最大限度地减少歇斯底里作用,显著改善了二硫化场效应晶体管 (MoS2FET) 的性能.

关键词:
在MoS2 FET中,超低低的歇斯底里症.超薄的兰他氧化.范德瓦尔斯的介电介电

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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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