四极异常的霍尔效应在磁性诱导的电子阴性状态下
Hiroki Koizumi1,2,3, Yuichi Yamasaki4, Hideto Yanagihara5,6
1Department of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan. hiroki.koizumi.d7@tohoku.ac.jp.
Nature communications
|December 8, 2023
概括
研究人员在NiCo2O4膜中发现了一种异构的线性异常霍尔效应 (AHE),显示出一种独特的四极依赖,可以通过磁场冷却来控制. 这一发现为电子阴性状态和离对角转运现象提供了新的见解.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 这就是Spintronics.
背景情况:
- 果相诱导横向电子运动,导致霍尔效应,如异常和拓的霍尔效应.
- 这些传统的霍尔效应通常在垂直于磁场的平面上是同otropic 的.
研究的目的:
- 调查和报告在NiCo2O4上膜中呈现的异性线性异常霍尔效应 (AHE) 的表现.
- 探索这种非传统的霍尔效应的潜在机制和可控性.
主要方法:
- 尼科2O4.4的表层薄膜生长.
- 电力传输测量,包括在不同电流方向下测量霍尔效应和磁场冷却协议.
主要成果:
- 在NiCo2O4中观察到一种异性质的线性AHE,它偏离了预期的同性质行为.
- 在均的AHE上叠加的内平面电流方向上的四极依赖的识别.
- 证明可以通过磁场冷却来控制异构效应的信号.
结论:
- 在NiCo2O4中的异构性AHE归因于电子阴性状态.
- 这种阴性状态源于与磁性圆形四极体和铁磁性排序相关的变形电子结构.
- 这些发现为研究非对角传输现象和电子阴性性提供了一个新的平台.
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