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Updated: Aug 2, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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使用机器学习对基于MoS2的有缺陷光子晶体的三个缺陷波长的数据分析

Narges Ansari1, Atieh Sohrabi2, Kimia Mirbaghestan2

  • 1Department of Atomic and Molecular Physics, Faculty of Physics, Alzahra University, Tehran, 1993893973, Iran. n.ansari@alzahra.ac.ir.

Scientific reports
|December 8, 2023
PubMed
概括

这项研究介绍了一种新的光子晶体,其中包含二硫化 (MoS2) 单层,用于可调节的窄带光吸收. 该设计实现了高吸收和可调节的波长,为先进的光电子设备铺平了道路.

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相关概念视频

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...