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高功率GaN MMIC放大器的稳定性,安装和测量考虑因素
Vicente González-Posadas1, José Luis Jiménez-Martín1, Angel Parra-Cerrada1
1Dpto. de Ingenieria Audiovisual y Comunicaciones, Universidad Politecnica de Madrid, Calle Nicolas Tesla, 28031 Madrid, Spain.
Sensors (Basel, Switzerland)
|December 9, 2023
概括
本研究介绍了一种高功率放大器 (HPA) 设计,详细介绍了在晶圆上测量过程中确保单体微波集成电路 (MMIC) 稳定性的方法,并确定了常见的不稳定性原因.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
背景情况:
- 高功率放大器 (HPA) 在晶圆上的测量存在稳定性挑战.
- 单立式微波集成电路 (MMIC) 需要精心设计,以防止振荡.
研究的目的:
- 为了呈现一个X频段的精确设计,三阶段的GaN HPA.
- 讨论在晶圆上测量过程中预测和确保MMIC稳定性的技术.
- 分析晶圆上和安装芯片测量的不稳定性.
主要方法:
- 使用GaN技术设计和模拟三级X频段HPA.
- 应用稳定性分析技术来预测和减轻振荡.
- 使用稳定性标准对测量结果进行表征.
主要成果:
- 一个GaN HPA的设计和制造,实现42dBm的输出功率和32%的功率效率在20V的排放偏差.
- 确定了导致不稳定的关键设计和测量点.
- 简单的分析方法被验证用于验证放大器稳定性.
结论:
- 对HPA的精确设计和稳定性分析对于可靠的性能至关重要.
- 放大器的不稳定性经常与测量过程中的错误或表征问题有关.
- 稳定性技术是描述和验证测量结果的有效工具.
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