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基于含有InGaN的短周期超级网的红光发射器,具有InGaN缓冲器的红光发射器

Grzegorz Staszczak¹, Iza Gorczyca¹, Ewa Grzanka^1,2

¹Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.

Materials (Basel, Switzerland)

|December 9, 2023

概括

研究人员通过在InGaN缓冲器上使用超格子来改善化 (InGaN) 量子结构中的红光辐射. 这种方法增强了的结合,显著地改变了光辐射.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
光电学是指光电子产品.

背景情况:

从化 (InGaN) 量子结构中实现红光发射是技术上具有挑战性的,因为的含量很低.
的结合对于调整基于InGaN的异构结构的发射波长至关重要.

研究的目的:

为了克服基于InGaN的异构结构中低合并的挑战.
为了将化物量子结构的光辐射转移到红色光谱中.

主要方法:

使用在具有不同含量的InGaN缓冲器上生长的超级网格.
将ab initio计算的超级网格带间隙与光发光辐射能量进行比较.
采用金属有机蒸汽相表 (MOVPE) 来进行样本生长.

主要成果:

与GaN基板上的超级格子相比,光发射向较低能量 (167 nm或0.72 eV) 显著转移.
展示了修改超级网格参数和缓冲器内容有效调节排放.
验证了InGaN缓冲器在实现所需的辐射波长方面的有效性.

结论:

超级网格对于在化物量子结构中实现红色辐射至关重要.
InGaN缓冲层的组成在控制光辐射特性方面发挥着至关重要的作用.

关键词:

半导体中的III-化物半导体.乐队结构乐队结构量子井是一个量子井.红色的排放是红色的排放超级格子超级格子

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