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通过数字化结构提高GaN/Ga₂O₃ P-N连接Uvc光探测器的性能

Ziling Cai¹, Xiyao He¹, Kaikai Wang¹

¹School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China.

|December 10, 2023

概括

本研究介绍了基于氧化 (Ga2O3) 的先进的紫外C光探测器 (UVCPDs),具有数字间结构,实现创纪录的超快响应时间和UV检测应用的增强性能.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

基于氧化 (Ga2O3) 的紫外线-C光探测器 (UVCPD) 对紫外线检测具有前景.
由于内置电场,PN连接设计比金属-半导体-金属 (MSM) 类型提供了优越的过渡性能.
现有的Ga2O3 PN-PDs需要在载体收集和电场分布方面进行优化.

研究的目的:

为基于Ga2O3的PN-UVCPD制造和研究一个数字间结构.
为了提高载体收集效率和光电探测器内的电场分布.
为改善Ga2O3PN光探测器性能提供设计指南.

主要方法:

使用数字间的n-Ga2O3层和p-GaN/n-Ga2O3皮层上的手指电极制造PN-PD.
超快响应时间,响应率和选择性比率的表征.
通过改变电极间距和周边,调查数字间结构的内在增强机制.

主要成果:

实现了31μs (1/e衰变) 和2.76μs (快速组件) 的超快速响应时间,优于现有的Ga2O3 UVCPD.
由于载体采集长度增加,提高了响应能力 (0.25 A W-1 在 0 V 自动供电).
在偏差下显著提高性能:41.7 A W-1响应率和8243选择性比,大大超过传统的PDs.

结论:

数字间结构显著提高了p-GaN/n-Ga2O3 UVCPD 的性能.
优化载体收集和电场分布是高性能Ga2O3PN-PD的关键.
这项工作为未来基于Ga2O3的光探测器开发提供了有价值的见解和设计策略.

关键词:

在Ga2O3中.数字间结构是指数字之间的结构.响应时间响应时间紫外线光电探测器 (UVC) 是一种光学探测器.

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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...