InGaN/GaN线线:

Redouane En-Nadir1, Mohamed A Basyooni-M Kabatas2,3,4, Mohammed Tihtih5

  • 1University of Sidi Mohamed Ben Abdullah, Fez, B.P. 2202, Morocco.

Heliyon
|December 11, 2023
PubMed
概括

本研究探讨了InGaN/GaN纳米结构,揭示了封闭潜力和强激光场 (ILF) 如何改变电子和光学特性. 调整这些因素为先进的应用提供了对纳米结构行为的控制.

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