Fengjun Yan1, Yao Wu1, Yilong Liu1
1School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China. dongw@hust.edu.cn.
您也可能阅读
通过共同作者、期刊和引用图与本文相关的文章。
缺陷工程增强了基于HfO2的薄膜中的铁电性,用于先进的电子. 本次审查涵盖了缺陷兴奋剂策略,阶段过渡和这些有前途的材料的未来优化.
科学领域:
背景情况:
研究的目的:
主要方法:
主要成果:
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
结论: