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Updated: Jul 8, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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在第二阶段的Ta2O5/HfO2记忆元中进行异质储库计算

Nestor Ghenzi1,2, Tae Won Park1, Seung Soo Kim1

  • 1Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea. kevinwoo@snu.ac.kr.

Nanoscale horizons
|December 12, 2023
PubMed
概括

异质的memristor网络提高了储库计算 (RC) 的性能. 通过结合不同的memristor行为,这项研究改善了RC系统中的模式识别.

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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