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Updated: Jul 8, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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在铁电门的Mott晶体管中记录高室温电阻切换,通过接口充电工程解锁

Yifei Hao1, Xuegang Chen1, Le Zhang1

  • 1Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.

Nature communications
|December 12, 2023
PubMed
概括

铁电门式Mott晶体管显示出对节能电子产品的承诺. 一个新的复合道在室温下实现了创纪录的38.440%的电阻切换比率,克服了以前的限制.

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