在范德瓦尔斯Fe3GeTe2/WSe2/Fe3GeTe2旋转中进行可调节的远程旋转运输
Anil Kumar Singh1, Weibo Gao2, Pritam Deb1
1Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur 784028, India. pdeb@tezu.ernet.in.
Physical chemistry chemical physics : PCCP
|December 13, 2023
概括
这项研究证明了一个新的Fe3GeTe2/WSe2/Fe3GeTe2异构结构,用于低功率的自旋电子. 它表现出可调节的旋转极化和高异常的霍尔导电性,使先进的磁器件成为可能.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 与半导体集成的二维 (2D) 铁磁材料使低功耗的自旋电子学成为可能.
- 垂直范德瓦尔斯 (vdW) 异构结构提供了具有电气控制的稳定磁接口.
- Fe3GeTe2 (FGT) 是一种2D铁磁体,具有高基里温度,大磁磁异性,拓状态和果曲率.
研究的目的:
- 设计和研究FGT/WSe2/FGT vdW异构结构的电子特性.
- 探索可调节的旋转极化和旋转器件中的磁阻的潜力.
- 为高级应用评估异常霍尔导电性 (AHC).
主要方法:
- 制造具有利接口的统一FGT/WSe2/FGT vdW异构结构.
- 理论上研究了能量依赖的自旋两极化和贝里曲率.
- 在不同偏向电压下分析道磁电阻 (TMR) 和异常霍尔导电性 (AHC).
主要成果:
- 在广泛的偏差范围内观察到显著的旋转偏振波动在-42.5%和41%之间.
- 在0.1 V Å−1时达到~-100%的负TMR,在0.2 V Å−1和-0.4 V Å−1.1时达到大的正TMR.
- 证明了可调节的AHC为626 S cm-1.1.
结论:
- FGT/WSe2/FGT异构表现出独特的电子行为,具有可切换的旋转极化和高AHC.
- 这种系统是低功耗自旋电子设备 (如MRAM和磁传感器) 的有希望的候选者.
- 可调节的电子结构有助于电气控制和长距离旋转运输在磁道连接装置.
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