在拓绝缘体Bi2Se3中的热生成的旋转电流
Rakshit Jain1,2, Max Stanley3, Arnab Bose1,2
1Department of Physics, Cornell University, Ithaca, NY 14853, USA.
Science advances
|December 13, 2023
概括
我们测量了 bismuth selenide (Bi2Se3) 中的热生成的自旋电流,发现它具有迄今为止观察到的最大的自旋Nernst比率. 这一发现促进了对拓绝缘体中自旋电流生成的理解.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 这就是Spintronics.
背景情况:
- 像Bi2Se3这样的拓绝缘体具有独特的电子特性.
- 了解热,电荷和自旋电流之间的相互转换对于自旋电子学至关重要.
- 之前的研究重点是重金属用于旋转电流的产生.
研究的目的:
- 在Bi2Se3中测量热生成的横旋电流.
- 为了完成热梯度,电荷电流和自旋电流之间的相互转换的理解.
- 为了将Bi2Se3中的自旋纳斯特效应与已确定的材料进行比较.
主要方法:
- 制造Bi2Se3/CoFeB双层的方法.
- 测量旋转Nernst磁热功率的测量.
- 测量旋转的霍尔磁阻.
主要成果:
- Bi2Se3产生大量的热驱动的自旋电流.
- 旋转电流密度与热梯度比的下限被确定为 (4.9 ± 0.9) × 10 6 [公式:参见文本].
- 对Bi2Se3的旋转Nernst比率是最大的报道,超过Pt和W的两到三倍.
结论:
- Bi2Se3是一种高效的材料,可以从热梯度中产生自旋电流.
- 大自旋纳斯特比率归因于高自旋霍尔导电性及其能量依赖性,与莫特关系一致.
- 这些发现为使用拓绝缘体的热电和自旋电子应用开辟了新的途径.
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