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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

通过现场内存操作将安全性嵌入到铁电FET阵列中.

Yixin Xu¹, Yi Xiao¹, Zijian Zhao²

¹Pennsylvania State University, State College, PA, 16802, USA.

Nature communications

|December 13, 2023

概括

本研究介绍了一种用于非易失性记忆 (NVM) 的新型,轻量级内存加密方法. 新方案显著提高了加密/解密吞吐量,并降低了延迟,优于传统的高级加密标准 (AES) 方法.

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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科学领域:

计算机工程计算机工程
记忆系统安全系统记忆系统安全
新兴的记忆技术

背景情况:

非易失性内存 (NVM) 提供了诸如低功耗和数据保留等优势,但由于数据持久,它们容易受到安全威胁.
现有的NVM安全解决方案,通常基于高级加密标准 (AES),引入了大量的性能和功率开销.
铁电场效应晶体管 (FeFET) 是一个有前途的NVM技术,但它们的安全影响需要新的解决方案.

研究的目的:

提出和验证一个轻量级的,现场内存加密/解密方案NVM与最小的开销.
在不影响性能的情况下解决NVM固有的安全漏洞.
用FeFET作为代表性的NVM技术来证明拟议方案的有效性.

主要方法:

开发了一个新的轻量级加密/解密方案,利用现场内存操作.
使用铁电场效应晶体管 (FeFET) 进行了设备级和阵列级的实验.
在128x128 FeFET AND型内存阵列上进行了全面的评估,分析了区域,延迟,功率和吞吐量.

主要成果:

与基于AES的方法相比,拟议方案实现了加密/解密吞吐量增加约22.6倍和14.1倍.
观察到可以忽略不计的功率罚款,与AES的显著开销形成鲜明对比.
对于神经网络的工作负载,该方案使加密和解密过程的平均延迟减少了90%.

结论:

拟议的轻量级加密方案为NVM,特别是FeFET提供了高效和安全的解决方案.
这种方法显著提高了吞吐量,减少了延迟,使其优于基于AES的NVM应用程序的安全性.
这些发现为利用NVM属性开发更安全,更高性能的下一代内存系统铺平了道路.