离子驱动突触晶体管阵列的WOx通道工程,用于低功耗的神经形态计算
Seonuk Jeon1, Heebum Kang1, Hyunjeong Kwak2
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Scientific reports
|December 13, 2023
概括
这项研究引入了一种新的突触晶体管阵列,用于节能的人工神经网络. 该设备对低电流状态进行了精确控制,在时尚-MNIST数据集上达到90%的准确性.
科学领域:
- 材料科学与工程 材料科学与工程
- 神经科学与计算机科学
背景情况:
- 人工神经网络 (ANN) 需要节能的突触设备来进行认知计算.
- 大规模的突触阵列需要低电流模式来降低功耗.
研究的目的:
- 开发一个三端突触晶体管阵列与类似调节的道电流状态在纳米安培范围.
- 通过工程突触设备实现低功耗,高性能ANN.
主要方法:
- 使用反应式喷射和回火制造CuOx/HfOx/WO3突触晶体管阵列的制造.
- WO3 道工程与受控的氧气和的合并.
- 温度依赖的研究以确定传输机制 (普尔-弗伦克尔导电).
- 在具有并行编程的7x7数组中展示突触特征.
主要成果:
- 设计的WO3通道实现了几十纳米安培的模拟电流调制.
- 优化的回火和气体结合使得稳定,低电流的突触运作成为可能.
- 频道电流调制与离子运动和门电流响应相关.
- 在使用多层神经网络中的突触晶体管的Fashion-MNIST数据集上实现了90%的识别精度.
结论:
- 拟议的CuOx/HfOx/WO3突触晶体管阵列有效地模仿了节能ANN的突触行为.
- WO3通道工程对于实现精确的低电流调制至关重要.
- 该设备显示了下一代神经形态计算应用的前景.
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