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Updated: Jul 8, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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对复杂缺陷模式的正子灭绝的扩散反应模型

Philipp Brunner1, Roland Würschum1

  • 1Institute of Materials Physics, Graz University of Technology, NAWI Graz, Petersgasse 16, Graz A-8010, Austria.

Journal of physics. Condensed matter : an Institute of Physics journal
|December 15, 2023
PubMed
概括

在现代材料科学中,在颗粒边界 (GBs) 捕获正电子至关重要,即使对于微米大小的颗粒也是如此. 这项研究扩展了模型,以准确考虑GB陷以及内粒细胞缺陷.

关键词:
缺陷 缺陷 缺陷 缺陷扩散-反应模型.谷物界限 谷物界限 谷物界限接口 接口 接口 接口子灭绝,正子灭绝

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