相关实验视频

Updated: Jul 8, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.3K

通过基板切断角度调制,提高InGaN量子点微LED的微结构和设备性能

Ying Gu, Yi Gong, Fan Zhang

    Optics letters
    |December 15, 2023
    PubMed
    概括

    优化化 (GaN) 模板结构可以提高化 (InGaN) 量子点 (QD) 质量,用于微型发光二极管 (微型LED). 在GaN-on-sapphire基板上0.4°的切断角产生了优异的InGaN QD和稳定的微型LED性能.

    更多相关视频

    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode10:41

    Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

    Published on: May 31, 2018

    8.8K
    Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes07:00

    Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

    Published on: June 25, 2020

    7.2K

    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    547