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NH₄⁺ 预干扰和Mo 兴奋剂VS₂ 调节纳米结构和电子特性,用于高效储存

Enzhi Li¹, Mingshan Wang¹, Xi Hu¹

¹School of New Energy and Materials, Southwest Petroleum University, Chengdu, Sichuan, 610500, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)

|December 15, 2023

概括

这项研究通过设计一种新阳极材料来增强离子混合电容器 (SIHC). 改进的Mo-doped VS2阳极显著提高了离子扩散,使高性能和长周期寿命用于先进的能量存储.

科学领域:

材料科学材料科学材料科学
电化学电化学电化学
储能储能储能储能储能储能

背景情况:

离子混合电容器 (SIHC) 提供了高能量密度和高功率输出的有希望的组合.
目前的SIHC面临由于阳极中离子 (Na+) 扩散动力学迟缓的局限性,阻碍了商业化.
转换型金属硫化物作为阳极被探索,但需要优化以实现高效的离子传输.

研究的目的:

为了增强SIHC转换型金属硫化物阳极的Na+扩散动力学和伪电容.
通过结构和电子财产法规开发一种新的阳极材料.
提高SIHCs的整体性能和循环稳定性.

主要方法:

通过NH4+预间隔和Mo-doping合成辅助VS2 (Mo-NVS2) 阳极材料.
纳米结构的表征,平面间距,缺陷和电子属性.
密度函数理论 (DFT) 计算来研究Na+扩散障碍和电子导电性.

主要成果:

NH4+ 预间隙扩大了平面间距,而 Mo-doping 引入了缺陷和硫空缺,创造了新的离子运输通道.
莫-NVS2显著增强了Na+扩散动力学和伪电容.
莫-NVS2实现了创纪录的高可逆容量453mAhg-1在3Ag-1超过20,000个周期.
组装的SIHC显示能量密度为98Wh kg-1,功率密度为11.84 kW kg-1,超长循环寿命 (>15,000周期),自放电率低 (0.84 mV h-1).

结论:

通过NH4+预插入和Mo-doping的结合策略,可以有效地优化VS2阳极的SIHCs.
增强的电子导电性和减少的Na+扩散屏障有助于优越的电化学性能.
开发的Mo-NVS2阳极代表了高性能和持久的SIHCs的重大进步.

关键词:

层间缺陷层间缺陷预先插曲和兴奋剂的使用.离子混合电容的离子电容.在硫空缺的职位.瓦纳二硫化物瓦纳二硫化物

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