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Magnetic Resonance Imaging of Multiple Sclerosis at 7.0 Tesla
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电场和SAR降低高阻抗射频阵列使用高通透性材料为7T MR成像使用7T MR成像
Aditya A Bhosale1, Yunkun Zhao1, Xiaoliang Zhang1,2
1Department of Biomedical Engineering, State University of New York at Buffalo, Buffalo, NY, United States.
ArXiv
|December 18, 2023
概括
超高场MRI中的高阻抗线圈减少了元素间的合,但由于高电场而增加了安全风险. 使用高压电材料可以通过降低电场和SAR值来减轻这些风险.
科学领域:
- 磁共振成像 (MRI) 是一种磁共振成像技术.
- 生物医学工程 生物医学工程
背景情况:
- 超高波段 (UHF) MRI 需要多通道阵列,但元素间合会降低图像质量和性能.
- 尽量减少合对于实现超高频MRI技术的全部潜力至关重要.
结论:
- 拟议的方法保留了B1效率和元素间脱.
- 这一创新解决了与高频MRI中的高阻抗线圈相关的安全问题.
- 需要最小的设计修改才能将高压电材料集成到现有的阵列设计中.
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