基于Se的CBRAM集成的人工突触

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Dharmendra Verma1, Tsung-Cheng Chen1, Bo Liu2

  • 1Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan.

Heliyon
|December 18, 2023
PubMed
概括

几层木氧化 (Bi2O2Se) 显示出有前途的导电桥随机访问存储器 (CBRAM) 和人工突触能力. 这种二维材料具有稳定的切换和多层特征,适用于先进的内存应用.

关键词:
两维材料是二维材料.人工突触是一种人工突触.生物2O2SeSe是什么意思在CBRAM中使用CBRAM.交点结构 交点结构

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