通过设计电荷陷结构,在高能储能性能的聚合物介电材料方面取得了进展
Zhaotong Meng1,2, Tiandong Zhang1,2, Changhai Zhang1,2
1Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin, 150080, P. R. China.
Advanced materials (Deerfield Beach, Fla.)
|December 18, 2023
概括
本综述总结了使用电荷陷增强聚合物介电膜的策略. 这些结构改善了高能储存和减少损耗,解决了电容器性能方面的关键挑战.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 聚合物科学 聚合物科学
背景情况:
- 全聚合物薄膜电容器很受欢迎,但面临着高导电性和电容损失的挑战.
- 现有的审查缺乏关注电荷陷结构,以改善聚合物介电储能.
- 尽管存在这些局限性,但仍在努力提高容量性能.
研究的目的:
- 系统地审查使用电荷陷结构的聚合物介电薄膜在高能储能性能方面的最新进展.
- 巩固有关电荷陷表征方法及其对聚合物介电材料的影响的知识.
- 为设计聚合物中电荷陷结构的策略提供全面的概述.
主要方法:
- 对聚合物介电材料的电荷陷表征技术的审查,评估它们的优点和弱点.
- 通过分子链优化,有机/无机兴奋剂,混合和多层结构来设计电荷陷结构的研究进展的系统审查.
- 分析充电陷增强聚合物电容性能的机制.
主要成果:
- 通过各种修改策略实现的电荷陷结构显著提高了聚合物介电膜的储能性能.
- 了解和应用电荷陷表征方法对于优化介电性质至关重要.
- 特定的设计方法,如分子优化和兴奋剂,有效地调节电荷捕获以提高电容.
结论:
- 电荷陷结构为克服聚合物介电电容器的局限性提供了一个有希望的途径,增强能量存储和绝缘.
- 本次审查巩固了当前的知识,为未来负责陷监管和工程应用的研究提供了基础.
- 对于更广泛的工程应用,需要在基础理论,性能表征和数值计算方面取得进一步的进展.
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