在Bi2Se3/Fe3GeTe2范德瓦尔斯异构结构中高效的旋转轨道扭矩切换
Mark Lohmann1,2, Darshana Wickramaratne1, Jisoo Moon1,3
1Materials Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States.
ACS nano
|December 18, 2023
概括
我们开发了一个全范德瓦尔斯异构结构,用于高效的旋转轨道扭矩 (SOT) 切换铁磁体. 这种结构实现了使用拓绝缘体切换垂直异性铁磁体的最低报告的临界电流密度.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 拓绝缘器 (TI) 为旋转轨道扭矩 (SOT) 应用提供了希望,这是由于高效的电荷到旋转转换.
- 与铁磁体接口的TI可以通过电荷转移和混合化来降低TI表面状态.
研究的目的:
- 为了研究SOT切换效率在一个全范德瓦尔斯 (vdW) 异构结构,结合一个TI和一个2D铁磁体.
- 为了确定在TI/铁磁铁接口上的关键开关电流密度和SOT效率.
主要方法:
- 制造Bi2Se3 / Fe3GeTe2 vdW异构结构. 制造Bi2Se3 / Fe3GeTe2 vdW异构结构
- 磁化切换检测使用异常的霍尔效应和磁光克尔效应.
- 通过第二的霍尔测量来测量SOT效率.
- 第一个原则密度函数理论计算.
主要成果:
- 实现了 Jc ≈ 1.2 × 10^6 A/cm^2 的关键切换电流密度,这是 Bi2Se3 切换垂直异性磁铁磁铁所报告的最低值.
- 确定SOT效率 (ξDL) 在1.41.8的范围内,与Bi2Se3.3的最高值相比较.
- 密度函数理论揭示了弱层间相互作用,使得可以进入具有平面内旋转偏振的TI表面状态.
结论:
- 具有弱层间相互作用的全vdW异构结构提高了SOT效率,并将临界电流密度降到最低.
- 这种方法为自旋电子应用程序提供了直接访问拓绝缘体表面状态的方法.
- 突出了下一代低功耗非挥发性存储器和自旋电子设备的潜力.
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