结构扭曲的持续性和散带拉什巴分裂在SnTe上方的铁电临界温度以上

Frédéric Chassot1, Aki Pulkkinen1,2, Geoffroy Kremer1,3

  • 1Department of Physics and Fribourg Center for Nanomaterials, Université de Fribourg, Fribourg 1700, Switzerland.

Nano letters
|December 18, 2023
PubMed
概括

这项研究表明,铁电半导体锡化 (SnTe) 呈现出持续的散带分裂,超过其临界温度. 这一发现挑战了SnTe.Te上拓表面状态的存在.

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