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Updated: Jul 8, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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在石墨烯纳米丝带中的电子传输上,从初始获得的位点依赖的跳转参数的影响

Masoumeh Davoudiniya1, Bo Yang1, Biplab Sanyal1

  • 1Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden. Biplab.Sanyal@physics.uu.se.

Physical chemistry chemical physics : PCCP
|December 20, 2023
PubMed
概括

本研究介绍了石墨烯纳米带 (GNRs) 的站点依赖的跳转参数,改进了理论模型. 这些新参数揭示了边缘效应和改变电子特性,增强了GNR在电子中的应用.

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