相关实验视频

Updated: Jul 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

由2D铁电半导体晶体管启用的等级处理,用于低功耗和高效的AI视觉系统

Guangcheng Wu¹, Li Xiang¹, Wenqiang Wang¹

¹Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.

Science bulletin

|December 20, 2023

概括

工程师们开发了一种新化晶体管,用于先进的人工光神经和电神经突触. 这一突破使人工智能视觉系统能够高效地进行传感器内处理和内存内计算.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
人工智能硬件硬件

背景情况:

由于分开的传感器,内存和计算单元,传统硬件面临效率和功率限制.
越来越多的数据和物联网加剧了这些硬件挑战.
需要新的材料和架构来实现集成处理和内存功能.

研究的目的:

设计和演示用于人工突触的α相化 (α-In2Se3) 晶体管.
为了使处理在传感器 (PIS) 和计算在内存 (CIM) 功能使用二维铁电半导体通道.
评估α-In2Se3晶体管在光神经和电神经突触应用中的性能.

主要方法:

使用α-In2Se3作为二维铁电半导体通道材料制造晶体管.
将晶体管的性能描述为光神经突触,测量光响应性和检测性.
评估晶体管作为电神经突触的性能,评估程序/删除速度和能源消耗.
将α-In2Se3晶体管集成到AI视觉系统中,以展示PIS和CIM功能.

主要成果:

α-In2Se3晶体管表现出高光响应度 (2855 A/W) 和检测能力 (2.91 × 10^14 斯) 作为一个光神经突触.
作为一个电神经突触,它实现了快速的程序/删除速度 (40 ns/50 μs) 和超低的能耗 (0.37 aJ/spike).
利用这些晶体管的AI视觉系统在12个时代内实现了92.63%的识别精度,展示了协同作用的PIS和CIM效应.

结论:

α-In2Se3晶体管显示出下一代视觉硬件的巨大潜力.
开发的设备提高了人工智能应用中的处理效率和功率效率.
这项工作为先进的集成传感和计算系统铺平了道路.

关键词:

人工智能视觉系统的人工智能视觉系统计算在内存中的计算在传感器内处理.突触装置是一种突触装置.两个维的铁电半导体半导体.

更多相关视频

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

相关概念视频

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...