在BaSnO3/SrTaO3和SrSnO3/SrTaO3接口形成的二维电子气体中增强载体密度
Sharad Mahatara1,2, Ryan Comes3, Boris Kiefer1
1Department of Physics, New Mexico State University, Las Cruces, NM 88003, United States of America.
Journal of physics. Condensed matter : an Institute of Physics journal
|December 21, 2023
概括
新的矿氧化物接口 - - 二泰坦酸/二 (BSO/STaO) 和斯坦酸/二 (SSO/STaO) - - 显示了增强的二维电子气体 (2DEG) 特性,以实现高效的电荷传输.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 在氧化物接口上的二维电子气体 (2DEG) 对于高电荷载体度和低损耗传输至关重要.
- 乙酸 (BaSnO3) 和乙酸 (SrSnO3) 是宽带差半导体,由于其Sn-5s传导带最小值 (CBM),具有高流动性.
研究的目的:
- 为了研究在乙烯/乙烯/乙烯 (BSO/STaO) 和乙烯/乙烯 (SSO/STaO) 接口上的电荷转移和2DEG形成.
- 探索SrTaO3 (STaO) 在促进向BSO和SSO注入电子以增强2DEG特性方面的潜力.
主要方法:
- 使用精确的基于晶体的N体潜力 (ACBN0) 密度函数理论 (DFT) 计算.
- 在BSO/STaO和SSO/STaO接口上分析电荷传输机制和电子带结构.
主要成果:
- ACBN0的计算证实了Ta-5d到Sn-5s在两个接口上的电荷转移.
- 与BSO/SrNbO3 (SNO) 相比,BSO/STaO的电子密度增加了50%左右.
- 与BSO/SNO相比,SSO/STaO的电子密度增加了20%左右,电导率提高了13-15%左右.
结论:
- BSO/STaO和SSO/STaO接口为2DEG形成提供了有前途的新材料平台.
- 这些接口促进了超低损失的电子传输,由于增强的载体密度.
- 这些发现为利用2DEG现象的先进电子设备铺平了道路.
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