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在制造高功率,高频半导体设备的平面化过程中,SiC的Si-与C终端表面的氧化差异

Ganggyu Lee¹, Yeram Lee¹, Sungmin Kim¹

¹Department of Energy Engineering, Hanyang University, Seoul, Republic of Korea.

Scientific reports

|December 21, 2023

概括

碳化 (SiC) 晶圆抛光是具有挑战性的,因为它的稳定性. 这项研究表明,C面在化学机械平面化 (CMP) 过程中氧化速度比Si面快,导致不同的去除速率.

科学领域:

材料科学材料科学材料科学
半导体制造业半导体制造业
表面工程是什么?表面工程是什么?

背景情况:

碳化 (SiC) 对于先进的功率半导体至关重要,因为它的高带隙和热稳定性.
化学机械平面化 (CMP) 对于减少SiC晶圆缺陷和表面平坦性至关重要.
在CMP过程中,SiC的表面终结 (Si-面与C-面) 影响其化学和机械性能.

研究的目的:

在SiC CMP过程中调查氧化物层的形成.
了解SiC终端面和氧化行为之间的关系.
通过控制氧化物薄膜特性来探索无磨料的CMP策略.

主要方法:

在CMP期间对Si-面和C-面的SiC氧化动力学的比较分析.
氧化物层特性 (颗粒大小,摩擦系数,缺陷) 的表征.
在不同的CMP条件下评估去除率,包括无磨料场景.

主要成果:

C面表现出比Si面更高的氧化动力学,形成更细的氧化物颗粒.
与Si面氧化物层相比,C面氧化物层显示出更高的摩擦系数和更多的缺陷.
在CMP过程中,C面显示出比Si面更高的去除率.
没有磨料的CMP是通过优化氧化膜的物理化学性能来实现的.

结论:

在CMP中,SiC终端面显著影响氧化行为和去除率.
控制氧化物薄膜的特性允许有效地无磨料抛光SiC晶片.
这些发现为优化SiC晶片处理用于功率半导体应用提供了洞察力.

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