在范德瓦尔斯的多铁路道连接处对多层导电状态的磁铁电协同控制,以实现内存计算

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Zhou Cui¹, Baisheng Sa¹, Kan-Hao Xue²

¹Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China. bssa@fzu.edu.cn.

|December 22, 2023

概括

本研究探讨了范德瓦尔斯的多铁道结 (MFTJs) 对于先进的数据存储. 研究人员取得了显著的道磁阻和电阻效应,使多层数据存储和内存计算成为可能.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
量子运输是一种量子运输.

背景情况:

二维 (2D) 范德瓦尔斯 (vdW) 多铁道结 (MFTJs) 对下一代数据存储和内存计算具有前景.
开发具有高效旋转运输特性的MFTJ对于这些应用至关重要.

研究的目的:

为了研究使用特定的二维材料制造的VDW MFTJ的旋转传输特性.
探索这些设备中道磁电阻 (TMR) 和道电阻 (TER) 效应的潜力.
评估MFTJ用于多层数据存储和内存逻辑计算的可行性.

主要方法:

使用单层 Mn₂Se₃ (旋转波器), TiTe₂ (电极) 和双层 In₂S₃ (道屏障) 构建 vdW MFTJ.
第一个原则量子运输计算来分析旋转运输.
分析k-RESOLVED传输光谱和spin-dependent状态的预测局部密度.

主要成果:

在具有二层In₂S_{3的有限偏差下,取得了显著的TMR (高达6237%) 和TER (高达1771%) 影响.}
确定了四种可区分的导电性状态,证明了四种状态非挥发性数据存储的潜力.
通过磁切换和电气控制展示了同时内存逻辑计算和多层数据存储功能.

结论:

基于研究材料的vdW MFTJ表现出显著的TMR和TER效应.
这些MFTJ非常适合用于多层数据存储和内存计算的先进应用.
这些发现为这些设备的实际实施提供了坚实的基础.

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