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Updated: Aug 11, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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在CrSX (X = Cl, Br, I) 半导体单层中产生孔诱导垂直磁异性和高基里温度

Ruilin Han1, Xiaomin Xue2, Yu Yan3

  • 1School of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China.

Nanomaterials (Basel, Switzerland)
|December 22, 2023
PubMed
概括

孔剂增强2D CrSX (X=Cl, Br, I) 铁磁体中的磁性异构和基里温度. 这一过程将它们转化为半金属和金属,非常适合用于自旋电子设备.

关键词:
克里度温度 克里度温度第一个原则是计算计算.磁性异构的能量能量是磁性异构的能量.两个维 (2D) 内在铁磁铁的内在铁磁铁.

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