从混乱到秩序的复杂路线在反-二元相变材料中的反-二元相变材料
Yonghui Zheng1, Wenxiong Song2, Zhitang Song2
1Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|December 22, 2023
概括
在Sb-Te相变材料中的结晶速度来自随机的原子位点占用,使得超快的结晶成为可能. 这种从无序到有序的过程是设计先进的相变存储器件的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 换相材料对于内存设备至关重要,结晶速度和多态度决定了性能.
- Sb-Te二进制系统是一个关键的母体材料,通常假设有有序的Sb/Te原子位点.
- 了解结晶过程中的细结构变化对于设备设计和信息存储至关重要.
研究的目的:
- 阐明Sb-Te材料中超快结晶背后的原子机制.
- 调查Sb-Te系统中混乱到秩序的过渡途径.
- 在相变内存中将原子排序与所得到的存储状态和电阻值相关联.
主要方法:
- 直接原子识别技术. 直接原子识别技术.
- 原子行为的计算模拟.
- 分析结构图案和化学排序.
主要成果:
- 在Sb-Te中超快的结晶归因于不同原子类的随机格子位点占用.
- 结晶的Sb-Te中的八面体图案与无形状态具有很高的相似性.
- 一个两步排序过程 (原子,然后化学) 导致不同的存储状态,具有不同的阻力.
结论:
- 随机的原子占用和与无形状态的结构相似性解释了Sb-Te.Te的快速结晶.
- 连续的原子和化学排序决定了可实现的储存多态.
- 这些发现为设计下一代具有可调节属性的神经形态设备提供了关键的见解.
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