在石墨烯晶体管中,子值斜率低于60mV/十年,由晶圆尺度上的通道几何学诱导
Mircea Dragoman1, Adrian Dinescu1, Silviu Vulpe1
1National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 126A, 077190 Bucharest, Romania.
Nanotechnology
|December 22, 2023
概括
使用纳米缩小的石墨烯通道的场效应晶体管实现了低于60mV/dec的下值摆动. 这种表现在适度温度范围的蝶结形通道中观察到.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 场效应晶体管 (FET) 是重要的电子元件.
- 石墨烯的独特电子特性被用于先进的晶体管应用.
- 下值波动 (SS) 是FET的关键性能指标,表明切换效率.
研究的目的:
- 为了实验性地证明在纳米压缩的石墨烯单层场效应晶体管中60mV/dec下值的波动.
- 研究道几何学 (对称与不对称) 对晶体管性能的影响.
- 分析这些设备中子值摆动的温度依赖性.
主要方法:
- 使用纳米缩小的石墨烯单层通道制造场效应晶体管.
- 晶体管电气性能的实验性表征,包括下值波动和开/关比.
- 采用蝶结 (对称) 和形 (不对称) 道几何.
主要成果:
- 在纳米压缩的石墨烯单层FET中实现了低于60mV/dec的下值摆动 (SS).
- 证明了对称 (bow-tie) 和不对称 (梯形) 的纳米收缩在石墨烯中都能打开带隙.
- 观察到一个10^5.5的开/关比.
- 在测试温度范围 (25°C-44°C) 中,石墨烯蝶结道中的SS保持在60mV/dec以下.
结论:
- 纳米压缩的石墨烯单层通道使FET具有出色的切换特性 (SS < 60 mV/dec).
- 纳米结构的几何学影响带隙开放和晶体管性能.
- 展示的设备在低功耗电子应用中显示出有前途的潜力.
相关概念视频
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