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Updated: Jul 7, 2025

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一个新的SiC沟MOSFET,具有自我调整的N型离子植入技术

Baozhu Wang1,2, Hongyi Xu1,2, Na Ren2,3

  • 1School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, China.

Micromachines
|December 23, 2023
PubMed
概括

这项研究引入了一种新型的碳化 (SiC) 自调整的N型离子植入沟沟MOSFET (NITMOS) 装置. 新设计通过减少电场,改善开关速度和功率损耗来提高性能.

关键词:
在P-epi层中.氧化物保护 氧化物保护自行调整的自我调整.碳化 (SiC) 是一种碳化.沟 MOSFET 的使用情况.

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