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使用热梯度在低温下快速Au-Sn结合的一种方法.

Wenchao Wang1,2, Ziyu Liu1,2, Delong Qiu2

  • 1State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.

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|December 23, 2023
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概括

金 (Au-Sn) 微利用热梯度结合 (TGB) 进行微电机系统 (MEMS) 和3D包装. 这种方法在较低的温度下实现高粘合强度,优化Au-Sn金属间化合物形成以提高可靠性.

关键词:
在 Au-Snn 中.翻转芯片是什么意思金属间化合物 (IMC) 是一种金属间化合物.固态扩散 (SSD) 是一种热梯度结合 (TGB) 是一种

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 纳米技术纳米技术

背景情况:

  • 芯片与金锡 (Au-Sn) 微结合对于微电机系统 (MEMS) 和3D包装至关重要.
  • Au-Sn微型提供低阻力,高可靠性和精细度,但需要高粘合温度和复杂的金属间化合物 (IMC) 形成.
  • 优化Au-Sn粘合对于先进的电子包装至关重要.

研究的目的:

  • 使用热梯度结合 (TGB) 方法研究Au-Sn固态扩散 (SSD) 结合.
  • 为了降低粘合温度并缩短粘合时间,同时实现高粘合强度.
  • 优化Au-Sn微型准备和粘合参数,以获得卓越的粘合质量.

主要方法:

  • 使用优化的工艺制备低粗度的Au-Sn微型.
  • 优化粘合参数:在酸 (HCOOH) 环境中的温度,时间和压力.
  • 使用有限元素模拟进行金属间化合物 (IMC) 形成和验证的表征.

主要成果:

  • 在优化 TGB 条件下,达到 23.898 MPa 的切削强度 (150 °C/250 °C 梯度,10 分钟, >10 MPa 压力).
  • 确定IMC为Au-Sn和Au5Sn,Au5Sn的形成随着锡耗尽后的回火时间的增加而增加.
  • 有限元模拟证实了在指定的梯度温度下增强的结合强度,并验证了固态扩散机制.

结论:

  • TGB方法有效降低了MEMS和3D包装的Au-Sn粘合温度.
  • 优化的参数和TGB方法产生高粘合强度和可靠的IMC形成.
  • 这种方法推进了Au-Sn微型接,用于高性能电子应用.