在一个基于InGaZnO的memristor中通过修改内在氧气空白来实现模拟记忆和突触可塑性
Chandreswar Mahata1, Hyojin So1, Soomin Kim2
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
Materials (Basel, Switzerland)
|December 23, 2023
概括
这项研究表明,基于InGaZnO的memristors具有稳定的多层次记忆状态,用于人工突触. 优化的等离子处理确保了可靠的设备性能,为先进的神经形态计算应用铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电气工程 电气工程
背景情况:
- 交感器件对于神经形态计算至关重要.
- 氧化 (InGaZnO) 提供了潜在的应用.
- 可靠的多层次记忆状态对于模仿生物突触至关重要.
研究的目的:
- 为了制造和描述基于InGaZnO的突触装置.
- 为了研究电子陷和陷生成机制.
- 为了证明突触可塑性行为的仿真.
主要方法:
- 用于设备制造的反应性射频喷沉积物.
- 当前合规调整和恒压压力用于表征.
- 氧和等离子处理以提高稳定性.
- 应用电压脉冲来模拟突触功能.
主要成果:
- 实现高度统一和可靠的多层记忆状态.
- 证明了稳定的循环到循环内存切换,具有很大的内存窗口 (~95.3).
- 成功模拟了短期的可塑性 (配对脉冲促进,尖峰率依赖的可塑性) 和长期的强化/抑郁.
结论:
- 制造的ITO/InGaZnO/ITO记忆器在突触应用中表现出有前途的性能.
- 优化的等离子体治疗提高了设备的可靠性和内存特性.
- 该设备有效地模仿各种突触行为,支持其在神经形态系统中的使用.
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