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和碳化再结晶通过激光化:一篇评论

Daniele Arduino^1,2, Stefano Stassi¹, Chiara Spano¹

¹Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy.

Materials (Basel, Switzerland)

|December 23, 2023

概括

激光化精确地修改了半导体特性,使无形 (Si) 和碳化 (SiC) 的局部结晶成为可能. 这种先进的技术可以避免完全的晶圆回火,这对于微电子和高功率设备至关重要.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
激光处理激光加工

背景情况:

对材料特性进行局部修改对于微电子设备制造至关重要.
激光化提供精确的空间控制半导体材料特性,包括晶体结构和剂激活.
传统的晶圆全方位化对于局部修改是低效的.

研究的目的:

综合审查激光火过程,以结晶无形 (Si) 和碳化 (SiC).
探索激光火的基本理论和技术.
分析使用激光化对Si和SiC结晶的关键研究.

主要方法:

审查激光化背后的理论原则.
对现有的关于无形Si和SiC的激光诱导结晶的文献进行分析.
专注于使局部材料属性修改成为可能的技术.

主要成果:

激光化提供了对Si和SiC的晶体结构的精确控制.
它使局部兴奋离子激活成为可能,消除了对完全晶圆回火的需求.
该综述综合了关于激光火对Si和SiC结晶的有效性的研究结果.

结论:

激光化是一种高效的技术,用于无形和碳化的受控结晶.
它的局部性质使得它非常适合用于先进的微电子和高功率设备制造.
对激光回火技术的进一步研究将推动半导体制造业的创新.

关键词:

结晶化结晶化的过程.整合器件是指集成的设备.激光火是一种激光火.是一种.碳化是碳化的重要组成部分.

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