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Updated: Jul 7, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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在高功率和射频应用的氧化场效应晶体管的进展

Ory Maimon1,2, Qiliang Li1,2,3

  • 1Department of Electrical Engineering, George Mason University, Fairfax, VA 22030, USA.

Materials (Basel, Switzerland)
|December 23, 2023
PubMed
概括

β-阶段氧化物 (β-Ga2O3) 显示出对下一代电力电子产品的希望,因为它比具有优越的性能. 本综述详细介绍了β-Ga2O3晶体管的进展,并讨论了商业化方面的挑战.

关键词:
这就是为什么RF是RF,RF是RF缺陷 缺陷 缺陷 缺陷 缺陷现场效应晶体管 (FET) 的使用氧化的氧化.高功率的高功率的高功率.宽带间隙半导体半导体宽带间隙半导体

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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors12:32

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