4H-SiC CMOS,298 K573 K

Nicola Rinaldi1, Rosalba Liguori1, Alexander May2

  • 1Department of Industrial Engineering, University of Salerno, Via Giovanni Paolo II, 132, 84084 Fisciano, SA, Italy.

PubMed
概括

这项研究引入了一种新的4H-SiC CMOS振荡器电路,用于高温传感高达573K. 该传感器表现出近线性频率-温度特性,适合高级应用.